?2014 fairchild semiconductor corporation FCH190N65F rev. c1 www.fairchildsemi.com 1 august 2014 FCH190N65F ? n-channel superfet ? ii frfet ? mosfet absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FCH190N65F_f155 unit v dss drain to source voltage 650 v v gss gate to source voltage - dc 20 v - ac (f > 1 hz) 30 i d drain current - continuous (t c = 25 o c) 20.6 a - continuous (t c = 100 o c) 13.1 i dm drain current - pulsed (note 1) 61.8 a e as single pulsed avalanche energy (note 2) 400 mj i ar avalanche current (note 1) 4.0 a e ar repetitive avalanche energy (note 1) 2.1 mj dv/dt mosfet dv/dt 100 v/ns peak diode recovery dv/dt (note 3) 50 p d power dissipation (t c = 25 o c) 208 w - derate above 25 o c1.67w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter FCH190N65F_f155 unit r jc thermal resistance, junction to case, max. 0.6 o c/w r ja thermal resistance, junction to ambient, max. 40 FCH190N65F n-channel superfet ? ii frfet ? mosfet 650 v, 20.6 a, 190 m features ?700 v @ t j = 150c ?typ. r ds(on) = 168 m ? ultra low gate charge (typ. q g = 60 nc) ? low effective output capacitance (typ. c oss(eff.) = 304 pf) ? 100% avalanche tested ?rohs compliant applications description superfet ? ii mosfet is fairchil d semiconductor?s brand-new high voltage super-junction (sj) mosf et family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. this technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. consequently, superfet ii mosfet is very suitable for the switching power applications such as pfc, server/telecom power, fpd tv power, atx power and industrial power applications. superfet ii frfet ? mosfet?s optimized body diode reverse recovery performance can remove additional component and improve system reliability. ? lcd / led / pdp tv ? telecom / server power supplies ? solar inverter ? ac - dc power supply g s d g d s to-247 long leads
www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCH190N65F rev. c1 FCH190N65F ? n-channel superfet ? ii frfet ? mosfet 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics part number top mark package packing method reel size tape width quantity FCH190N65F_f155 FCH190N65F to-247 g03 tube n/a n/a 30 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 1 ma, t j = 25 c 650 - - v v gs = 0 v, i d = 1 ma, t j = 150 c 700 - - bv dss / t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 o c - 0.71 - v/ o c i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v - - 10 a v ds = 520 v, v gs = 0 v, t c = 125 o c- 60 - i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 2 ma 3 - 5 v r ds(on) static drain to source on resistance v gs = 10 v, i d = 10 a - 168 190 m g fs forward transconductance v ds = 20 v, i d = 10 a -18-s c iss input capacitance v ds = 100 v, v gs = 0 v, f = 1 mhz - 2425 3225 pf c oss output capacitance - 78 104 pf c rss reverse transfer capacitance - 0.68 - pf c oss output capacitance v ds = 380 v, v gs = 0 v, f = 1 mhz - 44 - pf c oss(eff.) effective output capacitance v ds = 0 v to 400 v, v gs = 0 v - 304 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 10 a, v gs = 10 v (note 4) -6078nc q gs gate to source gate charge - 12 - nc q gd gate to drain ?miller? charge - 25 - nc esr equivalent series resistance f = 1 mhz - 0.6 - t d(on) turn-on delay time v dd = 380 v, i d = 10 a, v gs = 10 v, r g = 4.7 (note 4) -2560ns t r turn-on rise time - 11 32 ns t d(off) turn-off delay time - 62 134 ns t f turn-off fall time - 4.2 18 ns i s maximum continuous drain to source diode forward current - - 20.6 a i sm maximum pulsed drain to source diode forward current - - 61.8 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 10 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 10 a, di f /dt = 100 a/ s - 105 - ns q rr reverse recovery charge - 515 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature. 2. i as = 4 a, r g = 25 , starting t j = 25 c. 3. i sd 10 a, di/dt 200 a/ s, v dd 380 v, starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCH190N65F rev. c1 FCH190N65F ? n-channel superfet ? ii frfet ? mosfet 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.3 1 10 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 345678 0.1 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 1428425670 0.1 0.2 0.3 0.4 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.0 0.3 0.6 0.9 1.2 1.5 0.001 0.01 0.1 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 1000 0.1 1 10 100 1000 10000 50000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 1326395265 0 2 4 6 8 10 *note: i d = 10a v ds = 130v v ds = 325v v ds = 520v v gs , gate-source voltage [v] q g , total gate charge [nc]
www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCH190N65F rev. c1 FCH190N65F ? n-channel superfet ? ii frfet ? mosfet 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case t emperature figure 11. eoss vs. drain to source voltage -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 10a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 1 10 100 1000 0.1 1 10 100 10 s 100 s 1ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c] 0 140 280 420 560 700 0 2.4 4.8 7.2 9.6 12.0 e oss , [ j] v ds , drain to source voltage [v]
www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCH190N65F rev. c1 FCH190N65F ? n-channel superfet ? ii frfet ? mosfet 5 typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.005 0.01 0.1 1 z jc (t), thermal response [ o c/w ] 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.6 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse t 1 , rectangular pulse duration [sec] t 1 p dm t 2
www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCH190N65F rev. c1 FCH190N65F ? n-channel superfet ? ii frfet ? mosfet 6 figure 13. gate charge test circuit & waveform figure 14. resistive switch ing test circuit & waveforms figure 15. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCH190N65F rev. c1 FCH190N65F ? n-channel superfet ? ii frfet ? mosfet 7 figure 16. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCH190N65F rev. c1 FCH190N65F ? n-channel superfet ? ii frfet ? mosfet 8 mechanical dimensions figure 17. to-247, molded, 3-lead, jedec ab long leads package drawings are provided as a service to customers cons idering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconducto r?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to247-0a3
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